The HTRB test is configured to reverse bias major power handling junctions of the device samples. The devices are characteristically operated in a static operating mode at, or near, maximum-rated breakdown voltage and/or current levels. The HTRB test is typically applied on power devices. Stress Conditions: 150°C Tj, Biased. The HTRB is a life time Test for device subject to the Na+ contamination from both passivation layer and the packaging materials. If the Na+ slowly penetrate into packaging or N+ in the plasma nitride, the positive charges will produce imaging charges at the silicon/oxide surface, therefore the silicon surface concentration will be altered, thus BVD will be degraded. High temperature is very risky against breakdown instability due to localized mobile ion in the passivation layer. The localized mobile ion on the passivation layer will distort the electric field distribution of the device. These mobile ion coming from the device packaging can penetrate and re-distribute into the passivation layer due to high temperature and strong electric field. The dynamic concentration of trapped charge as a function of temperature, high bias voltage, trap concentration and depassivation coefficient will be the factors under investigation that causing overtime degradation of the UHV PLDMOS device.In this thesis, an UHV PLDMOS Proof-of-Concept device structure with metal II field plate optimization which can improve High Temperature Reverse Bias (HTRB) performance to meet the specification. By optimizing metal II field plate position the exposed area and the location of the gap can be minimized so that the total trapped charges can be reduced in passivation nitride and silicon dioxide interface region. Thus the breakdown voltage degradation can be reduced less than 10% under HTRB stress conditions. In this experiment, biasing voltage is 560V, maximum temperature is 150 °C and stress time duration is 168 hours.
The Power SOI stands for: Silicon on Insulator. In this thesis, an Ultra-high voltage triple RESURF lateral double-diffused MOS (LDMOS) in the BCD Integration process is developed and successfully simulated. The proposed triple RESURF LDMOS is able to achieve a Low specific on-state resistance of 137 mohm.mm2 while maintaining a breakdown voltage of 136 volts on power SOI device. The key feature of this novel device is linear shaped P-top rings which are located on the surface of the n-drift region. Optimization of linear P-top mask design is performed in order to achieve low on-state resistance while maintaining the desired breakdown voltage with low electric field. The conventionally uniform doping has power dissipation. The problem is peak temperature is near drain side so the objective is to shift to high temperature to source side to get uniform temperature or lower the peak temperature. The linear doping device is able to shift the high temperature near the source side. We have proactively tried to find to have a linearly doping drift for an improved Ron. Linear drift doping is used for RESURF temperature. Linear p-top. We are able to shift the peak temperature to source side and reduce the peak temperature. Using linear p-top Id_linear is higher so switching speed is faster.
黃俊杰 HUANG, JUNG-JIE ;陳兆南 CHEN, CHAO-NAN
GaN material offers a very good comparative advantage as a candidate for power device material compared to Silicon. The capability to be able to use for high voltage application and high electron mobility are some of the demanded part for either power device or switching device. The use of GaN-on-Si as a substrate for high power transistors is becoming an increasingly common choice, as an affordable large area alternative to expensive bulk substrates. Although there are still significant challenges to be overcome in order to produce high quality devices on these substrates.In order to accelerate the GaN-based device development, simulation and modelling have been commonly used in the research field area. The main problem arising from Sentaurus TCAD simulation tool is the fact that it does not have complete model to predict and explain the behavior of GaN MIS-HEMT device. Impurity implantation (e.g. Fluorine, Nitrogen) database availability, lack of capability to estimate possible defect and trap during process simulation are some of the reason we have to establish strategy to approach real physical phenomena on the GaN-based device. This latter is intended to establish physics-based TCAD simulation methodology for normally on 600V GaN MIS-HEMT device performance verification. Calibration work is based on literature review and GaN wafer experimental data. From the simulation result, the on-state performance of the simulated device is in good agreement with the wafer experimental data. Although, more efforts are still needed for the off-state simulation calibration.
本研究中使用基於囚徒困境理論與區塊鏈技術之交易模式研究，本研究中可讓賣家與買家們在選購商品前，給予一個平台讓雙方有協商的動作，提前讓賣家與買家們用此研究來進行金額上優劣，當賣方或買家們購買商品時可能會出現的價格上的各種變化，所以本研究使用價格推算，這樣即可讓賣家或買家們都可在任何的狀況下，進行雙方都可任可的合理價格範圍下購買商品，則該價格上對賣家與買家們來說是否認為該商品為賺錢或者賠本，本研究上使用網路貨幣錢包(BitoEx)進行金錢購買交易流程，程式模擬(remix.ethereum.org)、(Visual Studio Code)，與博弈理論方法之囚徒困境理論共同進行程式模擬，讓本研究可快速進行流程上的模擬測驗出好與壞。
An Innovated UHV PLDMOS device with improved HTRB Performance
許健 Gene Sheu
數位影像處理的研究在近年來變得相當頻繁而且進展快速，學者們提出各種不同的影像驗證機制，另一方面，區塊鏈技術在近期也非常熱門，由於區塊鏈機制中的Merkle tree 樹根為記憶圖像特徵提供了可靠的環境，IPFS（Inter-Planetary File System）協議提供了分散的存儲系統，本篇提出一個新的影像驗證機制，基於區塊鏈中的Merkle tree技術來進行驗證。在影像驗證上每個影像的驗證可以藉由Merkle tree的機制取得路徑上分支點的Hash值即可驗證影像的正確性，並且結合分散式儲存系統IPFS提高取得影像的可用性。本影像驗證之方法為分散式的架構，驗證的過程於區塊鏈網路節點中，是不需仰賴第三方，對於資安上層面，比起集中式的驗證管理系統更佳可靠。本篇論文方法除了可以驗證影像之完整性，也能在影像被竄改之情況下進行復原，由於驗證機制使用Hash值來比對，因此能辨別出影像上的些微更動，相對的對於影像遭旋轉、平移的篡改，本研究方法效果較不明顯。
Pooja Ravindra Deshmane
An Innovative Structure Using Linear Drift Doping for High Voltage Power SOI LDMOS Device
許健 Gene Sheu
本研究提出遠端智慧監控插座，以溫度感測模組結合固態繼電器(SSR)開關機制，及透過Raspberry Pi伺服器達到遠端監控，實現控制電器(燈泡、熱水壺等)所輸出電功率及監測環境溫度變化。使用者可透過網頁設定理想溫度，系統量測實際溫度，使用比例-積分-微分控制器(Proportional Integral and Derivative control，PID)及脈衝寬度調變(Pulse Width Modulation，PWM)演算法控制插座輸出之電量，讓量測之實際溫度趨近理想溫度，以達到降低電損耗及延長電器壽命。節點裝置使用感測器量測溫度，其資料透過ESP8266模組傳輸於伺服器端，伺服器端可顯示所有節點的量測數據，並描繪出曲線圖，讓使用者了解即時溫度及電力結果。
Adhi Cahyo Wijaya
Physics-based TCAD Simulation of GaN MIS-HEMT Device